New record for world's fastest transistor set

PhysOrg.com, accessed 22 Aug 2006 Engineers in the School of Electronics and Computer Science, University of Southampton, U.K., have developed a method to make bipolar transistors twice as fast as current devices. Bipolar transistors are solid state semiconductor devices used in mobile phones and various wireless systems. According to Professor Peter Ashburn who undertook this research in collaboration with STC Microelectronics, the researchers used a standard silicon bipolar technique with fluorine implants to deliver a record fT of 110 GHz which is twice as fast as the current record. Read more