New Gallium Nitride Film Method Beats the Heat

PhysOrg.com, 21 Feb 2006 A team of Los Alamos National Laboratory scientists have developed a method for growing crystalline gallium nitride films at lower temperatures than industry standards. By eliminating the higher temperatures and harsh, reactive environments that currently limit the types of materials used as substrates, the discovery could greatly increase the use of crystalline gallium nitride films in optical-electronic devices, like blue LEDs and laser diodes, high-density optical data storage devices, flat panel displays and solid state lighting. Read more