Supercritical Fluid Deposition of Nanowire Building Blocks

by Donna C. Arnold & Justin D. Holmes SPIE Nanotechnology E-Newsletter, December 2005

Moore’s Law is the beating heart at the centre of this industry, driving business growth through the technological realization of new process technologies that double the number of transistors on a chip about every two years. However, as the semiconductor industry continues to miniaturize in following Moore’s Law, there are some real challenges ahead, particularly in moving deeper and deeper into the nano-length scale. Sustaining the traditional logic MOSFET (metal-oxidesemiconductor field-effect transistor) structure, design, and material composition will be especially difficult beyond 22nm. The next technology standard is a 9nm physical gate length, predicted to be reached in 2016 according to the International Technology Roadmap for Semiconductors, and as early as 2011 according to some company roadmaps. There is even the question of how far silicon charge-based logic MOSFET transistor devices can be scaled. The semiconductor sector of the ICT industry is therefore actively chasing solutions that can fulfill the Moore criteria. Read more