Memories Look to New Materials Set

by David Lammers EE Times, 19 Dec 2005 Over the last five years, changes to logic devices have grabbed much of the industry's attention, as copper, low-k dielectrics and strained silicon were introduced to keep scaling on track. Now, memories are set to undergo an equally dramatic series of materials and design changes, ranging from new dielectrics in DRAM and flash to SRAMs with eight transistors per cell. Read more