Silicon Nanowires as Enhancement-Mode Schottky Barrier Field-Effect Transistors

by Sang-Mo Koo et al. Nanotechnology, 29 Jun 2005 (web release) Silicon nanowire field-effect transistors (SiNWFETs) have been fabricated with a highly simplified integration scheme to function as Schottky barrier transistors with excellent enhancement-mode characteristics and a high on/off current ratio ~107. SiNWFETs show significant improvement in the thermal emission leakage (~6 × 10-13 A µm-1) compared to reference FETs with a larger channel width (~7 × 10-10 A µm-1). The drain current level depends substantially on the contact metal work function as determined by examining devices with different source/drain contacts of Ti (ap4.33 eV) and Cr (ap4.50 eV). The different conduction mechanisms for accumulation- and inversion-mode operation are discussed and compared with two-dimensional numerical simulation results. Read more http://www.iop.org/EJ/article/-search=9552754.1/0957-4484/16/9/011/nano5_9_011.pdf