InAs Dots Generate Single Photons on Demand

Compound Semiconductor News, 3 Jun 2005 Researchers at Toshiba Research Europe make a single photon source by growing tiny pillars of InAs on a GaAs substrate. Experiments in quantum communications and computing could be about to get much easier thanks to the development of a semiconductor source of single photons at the telecoms window of 1.3 µm. Read the article