A Si-Based Quantum-Dot Light-Emitting Diode

by M. Jo et al. Applied Physics Letters, 7 Mar 2005 A Si-based light-emitting diode (LED) containing strained GaSb quantum dots (QDs) embedded in Si within the active region was fabricated by means of Si molecular-beam epitaxy. An external quantum efficiency of 0.3% was obtained for near bandedge luminescence at 11 K. The high luminosity of Si-based QD-LED was also evidenced by the fact that direct imaging on an infrared camera of standard sensitivity was successful. Characteristics of the QD-LED operating at room temperature are described. Read the article